List of Publications:

 

Heavily Cited (Greater than 50 times):

 

  1. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements”, J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, Jr., B. P. Keller, U. K. Mishra, and S. P. DenBaars, Applied Physics Letters 71, 2573 (1997)
  2.  Optical and structural properties of epitaxial MgxZn1-xO alloys AK Sharma, J Narayan, JF Muth, CW Teng, C Jin, A Kvit, RM Kolbas, OW Holland:  Applied Physics Letters 1999, 75:3327-3329.
  3. Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition.” JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan: Journal of Applied Physics 1999, 85:7884-7887.
  4. Visible-blind GaN Schottky barrier detectors grown on Si(111).A Osinsky, S Gangopadhyay, JW Yang, R Gaska, D Kuksenkov, H Temkin, IK Shmagin, YC Chang, JF Muth, RM Kolbas: Applied Physics Letters 1998, 72:551-553.
  5. Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO filmsA Tiwari, C Jin, A Kvit, D Kumar, JF Muth, J Narayan. Solid State Communications 2002, 121:371-374.
  6. Refractive indices and absorption coefficients of MgxZn1-xO alloys.” CW Teng, JF Muth, U Ozgur, MJ Bergmann, HO Everitt, AK Sharma, C Jin, J Narayan: Applied Physics Letters 2000, 76:979-981.

 

 

Most Recent:

1.             C Mion, C, J. F.  Muth E.A.Preble,D. Hanser, “Accurate dependence of gallium nitride thermal conductivity on dislocation density” Appl. Phys. Lett., 89 (9): Art. No. 092123 AUG 28 2006
2.             A. Dhawan, J.F. Muth “Plasmon resonances of gold nanoparticles incorporated inside an optical fibre matrix” NANOTECHNOLOGY, 17 (10): 2504-2511 MAY 28 2006
3.             P. Gollakota, A. Dhawan, P. Wellenius, L.M. Lunardi, J. F. Muth, Y.N. Saripalli, H.Y. Peng, H.O. Everitt, “Optical characterization of Eu-doped beta-Ga2O3 thin films” Appl. Phys. Lett.88 (22): Art. No. 221906 MAY 29 2006
4.             A. Dhawan, J.F. Muth, “In-line fiber optic structures for environmental sensing applications”, OPTICS LETTERS 31 (10): 1391-1393 MAY 15 2006 
 

 

Journal Papers:

 

1.             C Mion, C, J. F.  Muth E.A.Preble,D. Hanser, “Accurate dependence of gallium nitride thermal conductivity on dislocation density” Appl. Phys. Lett., 89 (9): Art. No. 092123 AUG 28 2006
2.             A. Dhawan, J.F. Muth “Plasmon resonances of gold nanoparticles incorporated inside an optical fibre matrix” NANOTECHNOLOGY, 17 (10): 2504-2511 MAY 28 2006
3.             P. Gollakota, A. Dhawan, P. Wellenius, L.M. Lunardi, J. F. Muth, Y.N. Saripalli, H.Y. Peng, H.O. Everitt, “Optical characterization of Eu-doped beta-Ga2O3 thin films” Appl. Phys. Lett.88 (22): Art. No. 221906 MAY 29 2006
4.             JS Park, ZJ Reitmeier, D Fothergill, XY Zhang, JF Muth, RF Davis: Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC (0001) substrates and the effect of carrier-blocking layers on their emission characteristics. Materials Science and Engineering B-Solid State Materials for Advanced Technology 2006, 127:169-179.
5.             A. Dhawan, J.F. Muth, “In-line fiber optic structures for environmental sensing applications”, OPTICS LETTERS 31 (10): 1391-1393 MAY 15 2006 
  1. HL Porter, C Mion, AL Cai, X Zhang, JF Muth: Growth of ZnO films on C-plane (0001) sapphire by pulsed electron deposition (PED). Materials Science and Engineering B-Solid State Materials for Advanced Technology 2005, 119:210-212.
  2. HL Porter, AL Cai, JF Muth, J Narayan: Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium. Applied Physics Letters 2005, 86.
  3. JS Park, DW Fothergill, XY Zhang, ZJ Reitmeier, JF Muth, RF Davis: Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes. Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 2005, 44:7254-7259.
  4. JF Muth, X Zhang, A Cai, D Fothergill, JC Roberts, P Rajagopal, JW Cook, EL Piner, KJ Linthicum: Gallium nitride surface quantum wells. Applied Physics Letters 2005, 87.
  5. BP Cook, HO Everitt, I Avrutsky, A Osinsky, A Cai, JF Muth: Refractive indices of ZnSiN2 on r-plane sapphire. Applied Physics Letters 2005, 86.
  6. E. Grant, J.F. Mattos, L.S., Braley J.C, Seyam, A. Ghosh, T Dhawan, A.: Developing portable acoustic arrays on a large-scale e-textile substrate. International Journal of Clothing Science and Technology 2004, 16.
  7. A Dhawan, AM Seyam, TK Ghosh, JF Muth: Woven fabric-based electrical circuits - Part I: Evaluating interconnect methods. Textile Research Journal 2004, 74:913-919.
  8. A Dhawan, TK Ghosh, AM Seyam, JF Muth: Woven fabric-based electrical circuits - Part II: Yarn and fabric structures to reduce crosstalk noise in woven fabric-based circuits. Textile Research Journal 2004, 74:955-960.
  9. M Park, V Sakhrani, JP Maria, JJ Cuomo, CW Teng, JF Muth, ME Ware, BJ Rodriguez, RJ Nemanich: Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation. Journal of Materials Research 2003, 18:768-771.
  10. AE Oberhofer, JF Muth, MAL Johnson, ZY Chen, EF Fleet, GD Cooper: Planar gallium nitride ultraviolet optical modulator. Applied Physics Letters 2003, 83:2748-2750.
  11. YC Chang, AL Cai, JF Muth, RM Kolbas, M Park, JJ Cuomo, A Hanser, J Bumgarner: Optical and structural studies of hydride vapor phase epitaxy grown GaN. Journal of Vacuum Science & Technology A 2003, 21:701-705.
  12. A Tiwari, C Jin, A Kvit, D Kumar, JF Muth, J Narayan: Structural, optical and magnetic properties of diluted magnetic semiconducting Zn1-xMnxO films. Solid State Communications 2002, 121:371-374.
  13. JC Roberts, CA Parker, JF Muth, SF Leboeuf, ME Aumer, SM Bedair, MJ Reed: Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13). Journal of Electronic Materials 2002, 31:L1-L6.
  14. M Park, JP Maria, JJ Cuomo, YC Chang, JF Muth, RM Kolbas, RJ Nemanich, E Carlson, J Bumgarner: X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy. Applied Physics Letters 2002, 81:1797-1799.
  15. J Narayan, AK Sharma, A Kvit, C Jin, JF Muth, OW Holland: Novel cubic ZnxMg1-xO epitaxial hetero structures on Si (100) substrates. Solid State Communications 2002, 121:9-13.
  16. YC Chang, AL Cai, MAL Johnson, JF Muth, RM Kolbas, ZJ Reitmeier, S Einfeldt, RF Davis: Electron-beam-induced optical memory effects in GaN. Applied Physics Letters 2002, 80:2675-2677.
  17. CW Teng, MO Aboelfotoh, RF Davis, JF Muth, RM Kolbas: Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers. Applied Physics Letters 2001, 78:1688-1690.
  18. YC Chang, AE Oberhofer, JF Muth, RM Kolbas, RF Davis: Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN. Applied Physics Letters 2001, 79:281-283.
  19. CW Teng, JF Muth, RM Kolbas, KM Hassan, AK Sharma, A Kvit, J Narayan: Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix. Applied Physics Letters 2000, 76:43-45.
  20. CW Teng, JF Muth, U Ozgur, MJ Bergmann, HO Everitt, AK Sharma, C Jin, J Narayan: Refractive indices and absorption coefficients of MgxZn1-xO alloys. Applied Physics Letters 2000, 76:979-981.
  21. CM Balkas, Z Sitar, L Bergman, IK Shmagin, JF Muth, R Kolbas, RJ Nemanich, RF Davis: Growth and characterization of GaN single crystals. Journal of Crystal Growth 2000, 208:100-106.
  22. ZH Yu, MAL Johnson, JD Brown, NA El-Masry, JF Muth, JW Cook, JF Schetzina, KW Haberern, HS Kong, JS Edmond: Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. Mrs Internet Journal of Nitride Semiconductor Research 1999, 4.
  23. AK Sharma, J Narayan, JF Muth, CW Teng, C Jin, A Kvit, RM Kolbas, OW Holland: Optical and structural properties of epitaxial MgxZn1-xO alloys. Applied Physics Letters 1999, 75:3327-3329.
  24. JF Muth, JD Brown, MAL Johnson, ZH Yu, RM Kolbas, JW Cook, JF Schetzina: Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys. Mrs Internet Journal of Nitride Semiconductor Research 1999, 4.
  25. JF Muth, RM Kolbas, AK Sharma, S Oktyabrsky, J Narayan: Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition. Journal of Applied Physics 1999, 85:7884-7887.
  26. VA Joshkin, CA Parker, SM Bedair, JF Muth, IK Shmagin, RM Kolbas, EL Piner, RJ Molnar: Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy. Journal of Applied Physics 1999, 86:281-288.
  27. KM Hassan, AK Sharma, J Narayan, JF Muth, CW Teng, RM Kolbas: Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition. Applied Physics Letters 1999, 75:1222-1224.
  28. MJ Bergmann, U Ozgur, HC Casey, JF Muth, YC Chang, RM Kolbas, RA Rao, CB Eom, M Schurman: Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer. Applied Physics Letters 1999, 74:3188-3190.
  29. MJ Bergmann, U Ozgur, HC Casey, HO Everitt, JF Muth: Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers. Applied Physics Letters 1999, 75:67-69.
  30. IK Shmagin, JF Muth, RM Kolbas, RD Dupuis, PA Grudowski, CJ Eiting, J Park, BS Shelton, DJH Lambert: Optical metastability in InGaN/GaN heterostructures. In: Compound Semiconductors 1997, vol. 156. pp. 375-378; 1998: 375-378.
  31. A Osinsky, S Gangopadhyay, JW Yang, R Gaska, D Kuksenkov, H Temkin, IK Shmagin, YC Chang, JF Muth, RM Kolbas: Visible-blind GaN Schottky barrier detectors grown on Si(111). Applied Physics Letters 1998, 72:551-553.
  32. IK Shmagin, JF Muth, RM Kolbas, S Krishnankutty, S Keller, UK Mishra, SP DenBaars: Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration. Journal of Applied Physics 1997, 81:2021-2023.
  33. IK Shmagin, JF Muth, RM Kolbas, S Krishnankutty, S Keller, AC Abare, LA Coldren, UK Mishra, SP DenBaars: Photoluminescence characteristics of GaN/InGaN/GaN quantum wells. Journal of Electronic Materials 1997, 26:325-329.
  34. IK Shmagin, JF Muth, JH Lee, RM Kolbas, CM Balkas, Z Sitar, RF Davis: Optical metastability in bulk GaN single crystals. Applied Physics Letters 1997, 71:455-457.
  35. IK Shmagin, JF Muth, RM Kolbas, RD Dupuis, PA Grudowski, CJ Eiting, J Park, BS Shelton, DJH Lambert: Optical data storage in InGaN/GaN heterostructures. Applied Physics Letters 1997, 71:1382-1384.
  36. IK Shmagin, JF Muth, RM Kolbas, MP Mack, AC Abare, S Keller, LA Coldren, UK Mishra, SP DenBaars: Reconfigurable optical properties in InGaN/GaN quantum wells. Applied Physics Letters 1997, 71:1455-1457.
  37. JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey, BP Keller, UK Mishra, SP DenBaars: Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements. Applied Physics Letters 1997, 71:2572-2574.
  38. HC Casey, J Muth, S Krishnankutty, JM Zavada: Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes. Applied Physics Letters 1996, 68:2867-2869.

 

44.                        Conference Proceedings Papers:

 

  1. 1997
  2. “Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures”, I. K. Shmagin, J. F. Muth, R. M. Kolbas, S. Krishnankutty, S. Keller, U. K. Mishra, and S. P. DenBaars, Materials Research Society Meeting, Boston, MA, Dec. 2-7, 1996; Materials Research Society Symp. Proc. Vol. 499, III-V Nitrides, F. A. Ponce, T. D. Moustakas, I. Akasaki, B. A. Monemar, Editors, pp. 1209-1214 (Proceedings of Material Research Society, Pittsburgh, PA 1997).
  3. “Growth of Bulk AlN and GaN Single Crystals by Sublimation”, C. M. Balkas, Z. Sitar, T. Zheleva, L. Bergman, I. K. Shmagin, J. F. Muth, R. M. Kolbas, R. Nemanich, and R. F. Davis, Materials Research Society Meeting, Boston, MA, Dec. 2-7, 1996; Materials Research Society Symp. Proc. Vol. 499, III-V Nitrides, F. A. Ponce, T. D. Moustakas, I. Akasaki, B. A. Monemar, Editors, pp. 41-46 (Proceedings of Material Research Society, Pittsburgh, PA 1997).
  4. 1998
  5. “Growth of High Quality Single Crystal ZnO Films on Sapphire by Pulsed Laser Ablation,” A. K. Sharma, K. Dovidenko, S. Oktyabrsky, D. E. Moxey, J. F. Muth, R. M. Kolbas, and J. Narayan, Materials Research Society Meeting, Spring 1998; Materials Research Society Symp. Proc. Vol. 526, “Advances in Laser Deposition of Materials”, Editors, R. Singh, D. Lowndes, D. Chrisey, E. Fogarassy and J. Narayan, pp. 305-?? (Proceedings of Material Research Society, Pittsburgh, PA 1998).
  6. “Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition,” Q. Wei, A. K. Sharma, R. J. Naratan, N. M. Ravindra, S. Oktyabrsky, J. Sankar, J. F. Muth, R. M. Kolbas, and J. Narayan, in “Advances in Laser Deposition of Materials”, edited by R. Singh, D. Lowndes, D. Chrisey, E. Fogarassy, and J. Narayan, Proceedings of the Materials Research Society Vol. 526, pp. 331-?? (1998).
  7. “Germanium Nanostructures Fabricated by Pulsed Laser Deposition,” K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, and R. M. Kolbas, in Microcrystalline and Nanocrystalline Semiconductors, edited by L. Canham, M. Sailor, K. Tanaka, and C. C. Tsai, Proceedings of the Materials Research Society Vol. 536, Boston, MA, 1998.
  8. "Pulsed laser deposition of undoped and AG-Doped stacked Structures of YBCO for bolometer device applications," D. E. Moxey, R. Kalyanaraman, A. K. Sharma, J. Narayan, C. B. Lee, and J. Muth, in "Advances in Laser Deposition of Materials," edited by R.Singh, D. Lowndes, D. Chrisey, E. Fogarassy, and J. Narayan, Mater. Res. Soc. Proc., 526, 269 (1998).
  9. "Analysis of Undoped and Ag-Doped High-Tc YBCO superconducting bolometers fabricated using a novel anti-reflecting coating and photolithographic technique," D. E. Moxey, A. K. Sharma, J. Narayan, C. B. Lee, S. Okyabrsky, and J. F. Muth, in "Ferroelectric Thin Films VII," edited by R. Jones, R. Schwartz, S. Summerfelt, and I. Yoo, Mater. Res. Soc. Proc., vol 541, Boston, MA, (1998)
  10. 2000
  11. “Size Effect in Germanium Nanostructures Fabricated by Pulsed Laser Deposition,” K. M. Hassan, A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng and R. M. Kolbas, in Nanophase and Nanocomposite Materials III, edited by H. Hahn, S. Komarneni and J. C. Parker, Materials Research Society Proceedings, Vol. 581 (2000).
  12. “Quantum Confinement of E1 and E2 transitions in Ge Quantum Dots Embedded in Al2O3 or an AlN Matrix,” C. W. Teng, J. F. Muth, R. M. Kolbas, K. M. Hassan, A. K. Sharma and J. Narayan, in Optical Microstructural Characterization of Semiconductors, edited by N. M. Kalkhoran, J. Piqueras, T. Sekiguchi and M. Selim Unlu, Materials Research Society Proceedings, Vol. 588 (2000).
  13. “Structural and Optical Property Investigations on Mg-Alloying in Epitaxial Zinc Oxide Films on Sapphire,” A. K. Sharma, C. Jin, J. Narayan, C. W. Teng, J. F. Muth, R. M. Kolbas and O W. Holland, GaN and Related Alloys, edited by H. Amano, R. M. Feenstra, T. H. Myers and M. S. Shur, MRS Internet Journal of Nitride Semiconductor Research, Vol. 595 (2000).
  14. Optical and Structural Characteristics of Gold Nanocrystallites Embedded in a Dielectric Matrix”, A.K. Sharma, J.F. Muth, A. Kvit, J. Narayan and R.M. Kolbas, Mat. Res. Soc. Symp. Vol. 617 © 2000
  15. Phase Separation In Multiple ZnO/Cubic-MgxZn1-xO Superlattice Heterostructures Observed Via High Resolution Transmission Electron MicroscopyA. Kvit, G. Dusher, A. K. Sharma, C. Jin, J. Narayan, J. Muth, and C.W Teng,GaN and Related Alloys-2000, edited by C.Wetzel, M.S. Shur, U.K. Mishra, B. Gil, K.Kishino, MRS Proceedings, Vol. 639 (2000)
  16. Novel Cubic ZnxMg1-xO Epitaxial Heterostructures on Si (100) Substrates”, A. Kvit, J. Narayan, A.K. Sharma, C. Jin, J.F. Muth, C.W. Teng, and O.W. Holland,GaN and Related Alloys-2000, edited by C.Wetzel, M.S. Shur, U.K. Mishra, B. Gil, K.Kishino, MRS Proceedings, Vol. 639 (2000)
  17. “Novel Nanocrystalline Materials by Pulsed Laser Deposition”, J. Narayan, A.K. Sharma, A. Kvit, D. Kumar, and J.F. Muth, Mat. Res. Soc. Symp. Vol. 617 © 2000 Materials Research Society
  18. 2001
  19. Pulsed Laser Deposition and Characterization of ZnxMn1-xO Films” C. Jin, A. Tiwari, A. Kvit, D. Kumar, J. Muth, and J. Narayan, Progress in Semiconductor Materials for Optoelectronic ApplicationsEditors: E.D. Jones, M.O. Manasreh, K.D. Choquette, D. Friedman, MRS Proceedings Volume 692 2001
  20. J.F. Muth, C.W. Teng, A.K. Sharma, A. Kvit, R.M. Kolbas, and J. Narayan  2001. “Growth of ZnO/MgZnO Superlattice on Sapphire” in “Laser-Solid Interactions for Materials Processing” Editors: D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara, X. Xi., MRS Proceedings Volume 617
  21. 2002
  22. Minseo Park, E. Carlson, Y.C. Chang, J.F. Muth, J. Bumgarner, R.M. Kolbas, J.J. Cuomo, and R.J. Nemanich 2002 “Optical Characterization of High Quality GaN Produced by High Rate Magnetron Sputter Epitaxy” in “GaN and Related Alloys—2000 Editors: C. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa., MRS Proceedings Volume 743
  23. H.L. Porter, C. Jin, J. Narayan, A.L. Cai, J.F. Muth, and O.W. Holland “Structural, Optical and Electrical Properties of the Novel Semiconductor Alloy ZnOxTe(1-x)” in “Progress in Semiconductors II--Electronic and Optoelectronic Applications” Editors: B.D. Weaver, M.O. Manasreh, C.C. Jagadish, S. Zollner, MRS Proceedings Volume 744
  24. A.L. Cai, J.F. Muth, M.J. Ree, H.L. Porter, C. Jin, and J. Narayan, 2002, Effect of Growth Temperature and Annealing on ZnO in “Progress in Semiconductors II--Electronic and Optoelectronic Applications”, Editors: B.D. Weaver, M.O. Manasreh, C.C. Jagadish, S. Zollner, MRS Proceedings Volume 744
  25.  J.F. Muth, E. Grant, A. Dhawan, A.M. Seyam, T. Ghosh, 2002 “Signal Propagation And Multiplexing Challenges In Electronic Textiles” in “Electronics on Unconventional Substrates--Electrotextiles and Giant-Area Flexible Circuits” Editors: M.S. Shur, P. Wilson, D. Urban, MRS Proceedings Volume 736
  26. A. Dhawan, T.K. Ghosh, A. Seyam, J.F. Muth 2002 “Development Of Woven Fabric-Based Electrical Circuits” in “Electronics on Unconventional Substrates--Electrotextiles and Giant-Area Flexible Circuits” Editors: M.S. Shur, P. Wilson, D. Urban, MRS Proceedings Volume 736
  27. K.A. Luthy, J.C. Braly, L.S. Mattos, E. Grant, J.F. Muth, K. Natarajan, A. Dhawan, T. Ghosh, A. Seyam 2002Initial Development of a Portable Acoustic Array on a Large-Scale E-Textile Substrate” in “Electronics on Unconventional Substrates--Electrotextiles and Giant-Area Flexible Circuits” Editors: M.S. Shur, P. Wilson, D. Urban, MRS Proceedings Volume 736
  28. Karthikeyan Natarajan, Anuj Dhawan, Abdelfattah M. Seyam, Tushar K. Ghosh, and John F. Muth 2002, Electrotextiles - Present and Future” in “Electronics on Unconventional Substrates--Electrotextiles and Giant-Area Flexible Circuits” Editors: M.S. Shur, P. Wilson, D. Urban, MRS Proceedings Volume 736
  29. 2003
  30. The Refractive Index and Other Properties of Doped ZnO Films, A.L. Cai, J.F. Muth, H.L. Porter, J. Narayan. Mat. Res. Soc. Symp. Proc. Vol. 764 (2003).
  31. C. Mion, Y.C. Chang, J.F. Muth, P. Rajagopal, and J.D. Brown Symposium Y
    GaN and Related Alloys—2003, Thermal Conductivity of GaN Grown on Silicon Substrates Y10.35 Editors: Hock Min Ng, Michael Wraback, Kazumasa Hiramatsu, Nicolas Grandjean MRS Proceedings Volume 798
  32. 2005
  33. A. Dhawn, T. Ghosh, and J.F. Muth “Incorporating Optical Fiber Based Sensors into Fabrics” Accepted for publication in Materials Research Society Proceedings 870E, MRS Symposium H, Giant-Area Electronics on Nonconventional Substrates
  34. P. Gollokota, H. Porter, A. Dhawan,Y. Sarapelli, L. Lunardi, J. F.Muth, “Gallium Oxide as a Host for Rare Earth Elements”, Accepted for publication in Materials Research Society Proceedings 870E, MRS Symposium V, Rare-Earth Doping for Optoelectronic Applications

 

  1. IEEE Archival Conference Proceeding

 

  1. (Invited) “Gallium nitride optoelectronic substrates for biological sensing”, Muth, J.F.; Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
    Volume 1,  7-11 Nov. 2004 Page(s):292 - 293

 

  1. “Photoluminescence of Er3+-doped AlxGa1-x As native oxides”, Hall, D.C.; Kou, L.; Wang, P.D.; Wu, H.; Muth, J.F.; Zhang, T.; Kolbas, R.M.; Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE Volume 2,  10-13 Nov. 1997 Page(s):105 - 106 vol.2

 

  1. “Optical Properties of Wide Bandgap III-V Nitride Semiconductors,” R. M. Kolbas, I. K. Shmagin and J. F. Muth, 1998 5th International Conference on Solid State and Integrated Circuit Technology, Editors: Min Zhang and King Ning Tu, IEEE Press ISBN 0-7803-4306-9, pp. 609-612.
  2. “Photoluminescence of dry-oxidized Er3+-doped Alx Ga1-xAs” Kou, L.; Hall, D.C.; Muth, J.F.; Zhang, T.; Kolbas, R.M.; Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE Volume 2,  1-4 Dec. 1998 Page(s):244 - 245 vol.2

 

  1. “Optical metastability in InGaN/GaN heterostructures” Shmagin, I.K.; Muth, J.F.; Kolbas, R.M.; Dupuis, R.D.; Grudowski, P.A.; Eiting, C.J.; Park, J.; Shelton, B.S.; Lambert, D.J.H.; Compound Semiconductors, 1997 IEEE International Symposium on 8-11 Sept. 1997 Page(s):375 - 378